4.8 Article

Ultrafast Transient Terahertz Conductivity of Mono layer MoS2 and WSe2 Grown by Chemical Vapor Deposition

期刊

ACS NANO
卷 8, 期 11, 页码 11147-11153

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn5034746

关键词

transition metal dichalcogenide; CVD; molybdenum disulfide; tungsten diselenide; ultrafast; terahertz conductivity; photoluminescence

资金

  1. EPSRC (UK)
  2. Academia Sinica (IAMS)
  3. Academia Sinica (Nano program)
  4. National Science Council Taiwan [NSC-99-2112-M-001-021-MY3]
  5. EPSRC [EP/H016368/1] Funding Source: UKRI
  6. Engineering and Physical Sciences Research Council [EP/H016368/1] Funding Source: researchfish

向作者/读者索取更多资源

We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

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