4.8 Article

Monatomic Chemical-Vapor-Deposited Graphene Membranes Bridge a Half-Millimeter-Scale Gap

期刊

ACS NANO
卷 8, 期 3, 页码 2336-2344

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn405805s

关键词

CVD graphene; freestanding membrane; rupture; microscopy; mechanics

资金

  1. Industrial Core Technology Development Programs of the Korean Ministry of Knowledge Economy [10033309]
  2. National Platform Technology Programs of the Korean Ministry of Knowledge Economy [10034751]
  3. Basic Science Research Program through the National Research Foundation of Korea (NRF)
  4. Ministry of Education, Science and Technology [2011-0010156]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [10034751] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [2011-0010156] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

One of the main concerns in nanotechnology is the utilization of nanomaterials in macroscopic applications without losing their extreme properties. In an effort to bridge the gap between the nano- and macroscales, we propose a clever fabrication method, the inverted floating method (IFM), for preparing freestanding chemical-vapor-deposited (CVD) graphene membranes. These freestanding membranes were then successfully suspended over a gap a half-millimeter in diameter. To understand the working principle of IFM, high-speed photography and white light interferometry were used to characterize and analyze the deformation behaviors of the freestanding graphene membranes in contact with a liquid during fabrication. Some nanoscale configurations in the macroscopic graphene membranes were able to be characterized by simple optical microscopy. The proposed IFM is a powerful approach to investigating the macroscopic structures of CVD graphene and enables the exploitation of freestanding (VD graphene for device applications.

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