期刊
ACS NANO
卷 8, 期 3, 页码 2838-2847出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn4066523
关键词
nanowires; gallium nitride; quartz; self-assembly; transfer; epitaxy; bottom-up
类别
资金
- Israel Science Foundation
- Minerva Stiftung
- European Research Council (ERC) [338849]
- Kimmel Center for Nanoscale Science
- Moskowitz Center for Nano and Bio-Nano Imaging
- Carolito Stiftung
- Adams Fellowship Program of the Israel Academy of Science
- European Research Council (ERC) [338849] Funding Source: European Research Council (ERC)
The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substrates. In most cases, the nanowires are covalently bonded to the substrate where they grow and cannot be transferred to other substrates. Here we demonstrate the guided growth of well-aligned horizontal GaN nanowires on quartz and their subsequent transfer to silicon wafers by selective etching of the quartz while maintaining their alignment. The guided growth was observed on different planes of quartz with varying degrees of alignment. We characterized the crystallographic orientations of the nanowires and proposed a new mechanism of dynamic graphoepitaxy for their guided growth on quartz. The transfer of the guided nanowires enabled the fabrication of back-gated field-effect transistors from aligned nanowire arrays on oxidized silicon wafers and the production of crossbar arrays. The guided growth of transferrable nanowires opens up the possibility of massively parallel integration of nanowires into functional systems on virtually any desired substrate.
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