期刊
ACS NANO
卷 8, 期 9, 页码 9616-9621出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn504014e
关键词
topological insulator; surface states; antidot; electron-electron interaction; weak antilocalization effect
类别
资金
- Research Grants Council of Hong Kong [605011, 604910, SEG CUHK06, 17304414]
- National Natural Science Foundation of China [11204183]
Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak antilocalization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.
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