期刊
ACS NANO
卷 8, 期 2, 页码 1538-1546出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn405759v
关键词
graphene nanoribbon; array; helium ion beam lithography; field-effect transistor
类别
资金
- office of Naval Research
Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must be resolved in order to introduce GNRs as a robust alternative technology. Here we report patterning, characterization, and superior chemical sensing of ultranarrow aligned GNR arrays down to 5 nm width using helium ion beam lithography (HIBL) for the first time. The patterned GNR arrays possess narrow and adjustable widths, high aspect ratios, and relatively high quality. Field-effect transistors were fabricated on such GNR arrays and temperature-dependent transport measurements show the thermally activated carrier transport in the GNR array structure. Furthermore, we have demonstrated exceptional NO2 gas sensitivity of the 5 nm GNR array devices down to parts per billion (ppb) levels. The results show the potential of HIBL fabricated GNRs for the electronic and sensing applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据