期刊
ACS NANO
卷 8, 期 9, 页码 9457-9462出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn503576x
关键词
phase change; PCRAM; nanodevices; in situ TEM; nonvolatile memory; In2Se3
类别
资金
- Ministry of Science and Technology [102-2221-E-009-039, 100-2628-E-009-023-MY3, 103-2221-E-009-222-MY3, 102-2221-E-006-077-MY3]
Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.
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