期刊
ACS NANO
卷 7, 期 4, 页码 3246-3252出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn3059136
关键词
two-dimensional materials; dichalcogenides; MoS2; graphene; nanoelectronics; memory; heterostructures
类别
资金
- Swiss National Science Foundation [138237, 135046]
- Swiss Nanoscience Institute (NCCR Nanoscience)
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all 20 transistor is further Integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 20 nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.
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