期刊
ACS NANO
卷 8, 期 1, 页码 623-633出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn405242t
关键词
graphene; semiconductor; mediator; interfacial composition engineering; selective photoredox
类别
资金
- National Natural Science Foundation of China (NSFC) [21173045, 20903022, 20903023]
- Award Program for Minjiang Scholar Professorship
- Natural Science Foundation (NSF) of Fujian Province for Distinguished Young Investigator Grant [2012J06003]
- Program for Returned High-Level Overseas Chinese Scholars of Fujian province
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry
We report a simple and general approach to improve the transfer efficiency of photogenerated charge carriers across the interface between graphene (GR) and semiconductor CdS by introducing a small amount of metal ions (Ca2+, Cr3+, Mn2+, Fe2+, Co2+, Ni2+, Cu2+, and Zn2+) as mediator into their interfacial layer matrix, while the intimate interfacial contact between GR and CdS is maintained. This simple strategy can not only significantly improve the visible-light-driven photoactivity of GR-CdS semiconductor composites for targeting selective photoredox reaction, including aerobic oxidation of alcohol and anaerobic reduction of nitro compound, but also drive a balance between the positive effect of GR on retarding the recombination of electron hole pairs photogenerated from semiconductor and the negative shielding effect' of GR resulting from the high weight addition of GR. Our current work highlights that the significant issue on improving the photoactivity of GR semiconductor composites via strengthening interfacial contact is not just a simple issue of tighter connection between GR and the semiconductor, but it is also the optimization of the atomic charge carrier transfer pathway across the interface between GR and the semiconductor.
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