期刊
ACS NANO
卷 7, 期 8, 页码 7021-7027出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn402919d
关键词
quantum tunneling; graphene; MoS2; vertical heterostructure; field-effect transistor; spin filter
类别
资金
- NRF
- Ministry of Education, Science, and Technology [2012R1A1A4A01008299, NO2012R1A1A2005772]
- National Research Foundation of Korea [2012R1A1A4A01008299, 2012R1A1A2005772] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced, by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据