4.8 Article

Photothermoelectric p-n Junction Photodetector with Intrinsic Broadband Polarimetry Based on Macroscopic Carbon Nanotube Films

期刊

ACS NANO
卷 7, 期 8, 页码 7271-7277

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn402679u

关键词

SWCNTs; photothermoelectric effect; intrinsic polarimetry; photodetector

资金

  1. Lockheed-Martin Rice University LANCER Program
  2. National Science Foundation [OISE-0968405, EEC-0540832]
  3. Department of Energy BES Program [DE-FG02-06ER46308]
  4. Robert A. Welch Foundation [C-1509]
  5. U.S. Department of Energy, Office of Science, through the National Institute for Nano-Engineering (NINE) at Sandia National Laboratories
  6. Laboratory Directed Research and Development Program at Sandia National Laboratories
  7. United States Department of Energy [DEAC01-94-AL85000]
  8. Intelligence Community Postdoctoral Fellowship Program
  9. Office Of Internatl Science &Engineering
  10. Office Of The Director [968405] Funding Source: National Science Foundation
  11. U.S. Department of Energy (DOE) [DE-FG02-06ER46308] Funding Source: U.S. Department of Energy (DOE)

向作者/读者索取更多资源

Light polarization is used in the animal kingdom for communication, navigation, and enhanced scene interpretation and also plays an important role in astronomy, remote sensing, and military applications. To date, there have been few photodetector materials demonstrated to have direct polarization sensitivity, as is usually the case in nature. Here, we report the realization of a carbon-based broadband photodetector, where the polarimetry is intrinsic to the active photodetector material. The detector is based on pn junctions formed between two macroscopic films of single-wall carbon nanotubes. A responsivity up to similar to 1 V/W was observed in these devices, with a broadband spectral response spanning the visible to the mid-infrared. This responsivity is about 35 times larger than previous devices without pn junctions. A combination of experiment and theory is used to demonstrate the photothermoelectric origin of the responsivity and to discuss the performance attributes of such devices.

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