期刊
ACS NANO
卷 7, 期 9, 页码 8275-8283出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn403752d
关键词
cadmium selenide; recovery; encapsulation; field-effect transistor; flexible electronics; nanocrystal; passivation
类别
资金
- NSF MRSEC [DMR11-20901]
- U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0002158]
- NSF-CBET [CBET-0854226]
- NSF [DMS-0935165]
- IBM
- Richard Perry University
- Direct For Mathematical & Physical Scien
- Division Of Mathematical Sciences [0935165] Funding Source: National Science Foundation
Colloidal semiconductor nanoaystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, in situ, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air.
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