期刊
ACS NANO
卷 7, 期 3, 页码 2659-2668出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn4000435
关键词
carbon nanotubes; sorting; field-effect transistors; semiconducting
类别
资金
- National Science Foundation [ECCS 0901414, 1059020, CHE-1059084]
- Global Climate and Energy Project (GCEP) at Stanford University
- Link Foundation Energy fellowship
- European Community [PIOF-GA-2009-252856]
- Ministerio de Educacion [EX2010-1063]
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1059084] Funding Source: National Science Foundation
We report a simple and scalable method to enrich large quantities of semiconducting arc-discharged single-walled carbon nanotubes (SWNTs) with diameters of 1.1-1.8nm using dithlafulvalene/thlophene copolymers. Stable solutions of highly Individualized and highly enriched semiconducting SWNTs were obtained after a simple sonication and centrifuge process. Molecular dynamics (MD) simulations of polymer backbone interactions with and without side chains indicated that the presence of long alkyl side chains gave rise to the selectivity toward semiconducting tubes, indicating the importance of the roles of the side chains to both solubilize and confer selectivity to the polymers. We found that, by increasing the ratio of thiophene to dithiafulvalene units in the polymer backbone (from pDTFF-1T to pDTFF-3T), we can slirfitly improve the selectivity toward semiconducting SWNTs. This Is likely due to the more flexible backbone of pDTFF-31 that allows the favorable wrapping of SWNTs with certain chirality as characterized by small-angle X-ray scattering. However, the dispersion yield was reduced from pDTFF-1T to pDTFF-3T. MD simulations showed that the reduction is due to the smaller polymer5WNT contact area, which reduces the dispersion ability of pDTFF-3T. These experimental and modeling results provide a better understanding for future rational design of polymers for sorting SWNTs. Finally, high on/off ratio solutionprocessed thin film transistors were fabricated from the sorted SWNTs to confirm the selective dispersion of semiconducting arc-discharge SWNTs.
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