期刊
ACS NANO
卷 7, 期 6, 页码 5160-5167出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn400852r
关键词
p-type oxide; tin monoxide; thin-film transistors
类别
资金
- KAUST
Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 degrees C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm(2) V-1 s(-1) and fabricated TFT devices with a linear field-effect mobility of 6.75 cm(2) V-1 s(-1) and 5.87 cm(2) V-1 s(-1) on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially Increase the hole mobility. A detailed phase Stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide.
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