期刊
ACS NANO
卷 7, 期 12, 页码 11350-11357出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn4052138
关键词
molybdenum disulfide; metal contact; homogeneity; atomic force microscopy; Raman spectroscopy; graphene; buffer layer
类别
资金
- NSF [CHE-1300180]
- Center for Low Energy Systems Technology (LEAST)
- STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program
- MARCO
- DARPA
- U.S. DoE, BES, Materials Science and Engineering Division
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [1300180] Funding Source: National Science Foundation
The understanding of the metal and transition metal dichalcogenide (TMD) interface is critical for future electronic device technologies based on this new class of two-dimensional semiconductors. Here, we investigate the initial growth of nanometer-thick Pd, Au, and Ag films on monolayer MoS2. Distinct growth morphologies are identified by atomic force microscopy: Pd forms a uniform contact, Au clusters into nanostructures, and Ag forms randomly distributed islands on MoS2. The formation of these different interfaces is elucidated by large-scale spin-polarized density functional theory calculations. Using Raman spectroscopy, we find that the interface homogeneity shows characteristic Raman shifts in E-2g(1) and A(1g) modes. Interestingly, we show that insertion of graphene between metal and MoS2 can effectively decouple MoS2 from the perturbations imparted by metal contacts (e.g., strain), while maintaining an effective electronic coupling between metal contact and MoS2, suggesting that graphene can act as a conductive buffer layer in TMD electronics.
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