期刊
ACS NANO
卷 6, 期 9, 页码 8342-8348出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn303085k
关键词
block copolymer; triblock terpolymer; self-assembly; nanolithography; square pattern; solvent vapor annealing
类别
资金
- National Science Foundation
- Semiconductor Research Corporation
- Center on Functional Engineered and Nano Architectonics
- Taiwan Semiconductor Manufacturing Company
- Tokyo Electron
- National Research Foundation of Korea
- Korean Government (Ministry of Education, Science and Technology) [NRF-2010-357-D00075]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1007760] Funding Source: National Science Foundation
Microphase separation of a polyisoprene-b-polystyrene-b-polyferrocenylsilane (Pl-b-PS-b-PFS) triblock terpolymer film during chloroform solvent-annealing formed a 44 nm period square-symmetry array of alternating PI and PFS cylinders in a PS matrix. This nanostructure was converted to either a positive pattern of posts or a negative pattern of holes with tunable diameter by oxygen reactive ion etching or by surface reconstruction in a solvent, respectively, and coexisting post and hole patterns were also formed. Square arrays of silicon posts, pits, and inverted pyramids were fabricated by pattern transfer from the triblock terpolymer film into silicon substrates. The morphology of the triblock terpolymer film varied with the chloroform vapor pressure during solvent annealing, which was explained by selective swelling of the PI block at high vapor pressures. This triblock terpolymer system provides a convenient block copolymer lithography process for generation of nanoscale posts or holes with square symmetry.
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