期刊
ACS NANO
卷 6, 期 2, 页码 1284-1290出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn203998j
关键词
graphene transfer; transparent conductive film; field-effect transistor; doping; fluoropolymer
类别
资金
- National Science Foundation [1006350]
- Office of Naval Research, the Nanoelectronic Research Initiative (NRI SWAN Center)
- NRF of Korea [2010-0020414]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1006350] Funding Source: National Science Foundation
Chemical doping can decrease sheet resistance of graphene while maintaining its high transparency. We report a new method to simultaneously transfer and dope chemical vapor deposition grown graphene onto a target substrate using a fluoropolymer as both the supporting and doping layer. Solvent was used to remove a significant fraction of the supporting fluoropolymer, but residual polymer remained that doped the graphene significantly. This contrasts with a more widely used supporting layer, polymethylmethacrylate, which does not Induce significant doping during transfer. The fluoropolymer doping mechanism can be explained by the rearrangement of fluorine atoms on the graphene basal plane caused by either thermal annealing or soaking in solvent, which Induces ordered dipole moments near the graphene surface. This simultaneous transfer and doping of the graphene with a fluoropolymer increases the carrier density significantly, and the resulting monolayer graphene film exhibits a sheet resistance of similar to 320 Omega/sq. Finally, the method presented here was used to fabricate flexible and a transparent graphene electrode on a plastic substrate.
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