期刊
ACS NANO
卷 6, 期 2, 页码 1109-1115出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn203516z
关键词
hysteresis; carbon nanotube transistors; threshold voltage; CNTFET; variability
类别
资金
- NSF
- FENA Center of the Focus Center, a subsidiary of the Semiconductor Research Corporation
- IBM through the Stanford Center for Integrated Systems (CIS)
The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency-hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.
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