期刊
ACS NANO
卷 6, 期 3, 页码 1888-1900出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn204848r
关键词
nanowire; monolayer; shear force; contact printing; assembly techniques; flexible electronics; high-frequency device; integrated circuitry
类别
资金
- Hong Kong University of Science and Technology (HKUST) [SRF11EGI7-B, SRF11EG17PG-B]
- MOE [NCET-10-0643]
- NSFC [11104207, 91123009, 10975109]
- Natural Science of Jiangsu [BK2011348]
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology)
High-performance flexible electronics has attracted much attention in recent years due to potential applications in flexible displays, artificial skin, radio frequency identification, sensor tapes, etc. Various materials such as organic and inorganic semiconductor nanowires, carbon nanotubes, graphene, etc. have been explored as the active semiconductor components for flexible devices. Among them, inorganic semiconductor nanowires are considered as highly promising materials due to their relatively high carrier mobility, reliable control on geometry and electronic properties, and cost-effective synthesis processes. In this review, recent progress on the assembly of high-performance inorganic semiconductor nanowires and their applications for large-scale flexible electronics will be summarized. In particular, nanowire-based Integrated circuitry and high-frequency electronics will be highlighted.
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