4.8 Article

Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer

期刊

ACS NANO
卷 6, 期 2, 页码 1486-1493

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn204395n

关键词

nitrogen-doped graphene; field-effect transistor; conducting polymer; aptasensor; vascular endothelial growth factor; aptamer

资金

  1. World Class University (WCU)
  2. National Research Foundation of Korea (NRF)
  3. Ministry of Education, Science and Technology (MEST) [R31-10031, 2011-0026424, 2011-0017174, 2011-0017125]
  4. Global Frontier Research Center for Advanced Soft Electronics

向作者/读者索取更多资源

Graphene-based field-effect transistors (FETs) have been developed rapidly and are currently considered as an alternative for postsilicon electronics. In this study, polypyrrole-converted nitrogen-doped few-layer graphene (PPy-NDFLG) was grown on Cu substrate by chemical vapor deposition combined with vapor deposition polymerization and then transferred onto a flexible substrate. Furthermore, antivascular endothelial growth factor (VEGF) RNA aptamer conjugated PPy-NDFLG was integrated Into a liquid-ion gated FET geometry to fabricate a high-performance VEGF aptamer-based sensor. Field-induced high sensitivity was observed for the analyte-binding events, eventually leading to the recognition of the target molecules at an unprecedentedly low concentration (100 fM). Additionally, the aptasensor had excellent reusability, mechanical bendability, and durability In the flexible process. The developed methodology describes, for the first time, the fabrication of N-doped graphene using conducting polymers including heteroatoms in their structures as the carbonization precursor and demonstrates its use in a high-performance, flexible FET-type aptasensor to detect vascular endothelial growth factor as a cancer biomarker.

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