期刊
ACS NANO
卷 6, 期 7, 页码 6378-6385出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn301940k
关键词
hexagonal boron nitride; h-BN; CVD; sequential growth; 2D Raman mapping
类别
资金
- Army Research Office [W911NF1010428]
- NRI SWAN
- IBM
- National Science Foundation [0618242]
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [0618242] Funding Source: National Science Foundation
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.
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