期刊
ACS NANO
卷 6, 期 4, 页码 3424-3433出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn300459r
关键词
block copolymer; lithography; oligosaccharide; thin films; nanopatterning; poly(trimethylsilyl styrene)
类别
资金
- Nissan Chemical Company
- CNRS
- RTRA Nanosciences [FCSN-2007-13P]
- Welch Foundation [F-1709]
- National Science Foundation
Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (chi), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large chi and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.
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