期刊
ACS NANO
卷 6, 期 6, 页码 5687-5692出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn301814w
关键词
GaN nanowires; LED; piezoelectric; nanogenerator; self-powered system
类别
资金
- BES DOE
- MANA
- NIMS (Japan),
- Chinese Academy of Sciences [KJCX2-YW-M13]
- National Science Council
- Graduate Students Study Abroad Scholarship
Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.
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