期刊
ACS NANO
卷 6, 期 3, 页码 2471-2476出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn204827h
关键词
monolayer graphene; chemical vapor deposition; low-temperature growth; electropolish; toluene
类别
资金
- National Science Foundation [1006350]
- Nanoelectrionic Research Initiative-SouthWest Academy of Nanoelectronics (NRI-SWAN)
- Office of Naval Research
- China Scholarship Council
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1006350] Funding Source: National Science Foundation
A two-step CVD route with toluene as the carbon precursor was used to grow continuous large-area monolayer graphene films on a very flat, electropolished Cu foil surface at 600 degrees C, lower than any temperature reported to date for growing continuous monolayer graphene. Graphene coverage is higher on the surface of electropolished Cu foil than that on the unelectropolished one under the same growth conditions. The measured hole and electron mobilities of the monolayer graphene grown at 600 degrees C were 811 and 190 cm(2)/(V.s), respectively, and the shift of the Dirac point was 18 V. The asymmetry in carrier mobilities can be attributed to extrinsic doping during the growth or transfer. The optical transmittance of graphene at 550 nm was 97.33%, confirming it was a monolayer, and the sheet resistance was similar to 8.02 x 10(3) Omega/square.
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