期刊
ACS NANO
卷 6, 期 9, 页码 8166-8172出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn3028776
关键词
resistance random access memory; selection device; nonlinearity; crested oxide barrier; one selector-one resistor
类别
资金
- R&D Program of the Ministry of Knowledge Economy
We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaOx,/TiO2/TaOx structure, high current density over 10(7) A cm(-2) and excellent non-linear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO2 film, and consequently, the energy band of the TiO2 film was symmetrically bent at the top and bottom TaOx/TiO2 interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.
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