期刊
ACS NANO
卷 6, 期 6, 页码 5040-5050出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn300672k
关键词
charge injection; high-kappa dielectric; hafnia; alumina; HfO2; Al2O3; atomic layer deposition; carbon nanotube; field effect transistor; thin film transistor
类别
资金
- Defense Threat Reduction Agency
We investigate charge injection into the gate dielectric of single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) having Al2O3 and HfO2 gate dielectrics. We demonstrate the use of electric field gradient microscopy (EFM) to identify the sign and approximate the magnitude of the injected charge carriers. Charge injection rates and saturation levels are found to differ between electrons and holes and also vary according to gate dielectric material. Electrically, Al2O3 gated devices demonstrate smaller average hysteresis and notably higher average on-state current and p-type mobility than those gated by HfO2. These differences in transfer characteristics are attributed to the charge injection, observed via EFM, and correlate well with differences in tunneling barrier height for electrons and holes formed in the conduction and valence at the SWCNT/dielectric interface, respectively. This work emphasizes the need to understand the SWCNT/dielectric interface to overcome charge injection that occurs in the focused field region adjacent to SWCNTs and indicates that large barrier heights are key to minimizing the effect.
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