期刊
ACS NANO
卷 6, 期 10, 页码 8583-8590出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn301675f
关键词
hexagonal boron nitride; chemical vapor deposition; borazine; copper foil
类别
资金
- National Science Foundation [NSF DMR 0845358]
- Materials, Structures and Device (MSD) Center, focus center research program (FCRP), a Semiconductor Research Corporation program
- MIT/Army Institute for Soldier Nanotechnologies (ISN)
- Army Research Laboratory
- Graphene Approaches to Terahertz Electronics (GATE) - MURI [N00014-09-1-1063]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0845358] Funding Source: National Science Foundation
Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is dose to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 mu m(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer In top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V . s) range) remains the same before and after device integration.
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