期刊
ACS NANO
卷 6, 期 3, 页码 1970-1978出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn3005262
关键词
graphene; controllable doping; tunable band gaps; p-type transport properties; boron-doped; microwave plasma
类别
资金
- Research Grants Council of Hong Kong [CityU 101809]
We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to similar to 0.54 eV with Increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices.
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