期刊
ACS NANO
卷 5, 期 9, 页码 7510-7516出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn2024607
关键词
topological insulator; Bi2Se3; nanoribbon; linear magneto-resistance; two-dimensional transport
类别
资金
- ACS [48800-DNI10]
- NSF [DMR-0906415]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0906415] Funding Source: National Science Foundation
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 20 topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic application's.
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