期刊
ACS NANO
卷 5, 期 9, 页码 7303-7309出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn202141k
关键词
boron nitride; monolayer films; growth; etching; borazine; hydrogen; transition metal
类别
资金
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-98CH10886]
The growth of large-area hexagonal boron nitride (h-BN) monolayers on catalytic metal substrates is a topic of scientific and technological interest. We have used real-time microscopy during the growth process to study h-BN chemical vapor deposition (CVD) from borazine on Ru(0001) single crystals and thin films. At low borazine pressures, individual h-BN domains nucleate sparsely, grow to macroscopic dimensions, and coalescence to form a closed monolayer film. A quantitative analysis shows borazine adsorption and dissociation predominantly on Ru, with the h-BN covered areas being at least 100 times less reactive. We establish strong effects of hydrogen added to the CVD precursor gas in controlling the in-plane expansion and morphology of the growing h-BN domains. High-temperature exposure of h-BN/Ru to pure hydrogen causes the controlled edge detachment of B and N and can be used as a clean etching process for h-BN on metals.
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