4.8 Article

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

期刊

ACS NANO
卷 5, 期 4, 页码 3385-3390

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn200854p

关键词

graphene; low temperature growth; chemical vapor deposition; solid carbon sources; liquid carbon sources

资金

  1. Fundamental Research Funds for the Central Universities [WK2340000011]
  2. NSFC [10974188, 91021018, 20933006, 11034006]
  3. CAS
  4. NKBRPC [2009CB929502]
  5. NCET
  6. CPSFFP [20100470837]

向作者/读者索取更多资源

Graphene has attracted a lot of research Interest owing to its exotic properties-and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 degrees C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 degrees C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 degrees C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a, way to an undemanding route for economical and convenient graphene growth.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据