期刊
ACS NANO
卷 5, 期 4, 页码 3385-3390出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn200854p
关键词
graphene; low temperature growth; chemical vapor deposition; solid carbon sources; liquid carbon sources
类别
资金
- Fundamental Research Funds for the Central Universities [WK2340000011]
- NSFC [10974188, 91021018, 20933006, 11034006]
- CAS
- NKBRPC [2009CB929502]
- NCET
- CPSFFP [20100470837]
Graphene has attracted a lot of research Interest owing to its exotic properties-and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000 degrees C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400 degrees C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300 degrees C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a, way to an undemanding route for economical and convenient graphene growth.
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