期刊
ACS NANO
卷 5, 期 2, 页码 1154-1164出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn102803q
关键词
graphene; reduced graphene oxide; gas sensor; sensing performance; field-effect transistor
类别
资金
- NSF [CMMI-0900509, CMMI-0856753]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-ACO2-06CH11357]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [0900569, 0856753] Funding Source: National Science Foundation
Graphene is worth evaluating for chemical sensing and biosensing due to its outstanding physical and chemical properties. We first report on the fabrication and characterization of gas sensors using a back-gated field-effect transistor platform with chemically reduced graphene oxide (R-GO) as the conducting channel. These sensors exhibited a 360% increase in response when exposed to 100 ppm NO2 in air, compared with thermally reduced graphene oxide sensors we reported earlier. We then present a new method of signal processing/data interpretation that addresses (i) sensing devices with long recovery periods (such as required for sensing gases with these R-GO sensors) as well as (ii) device-to-device variations. A theoretical analysis is used to Illuminate the importance of using the new signal processing method when the sensing device suffers from slow recovery and non-negligible contact resistance. We suggest that the work reported here (including the sensor signal processing method and the Inherent simplicity of device fabrication) Is a significant step toward the real-world application of graphene-based chemical sensors.
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