期刊
ACS NANO
卷 5, 期 10, 页码 7707-7712出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn202852J
关键词
dichalcogenides; field-effect transistor; MoS2; localization; Mott variable range hopping; resonant tunneling; charge impurity scattering
类别
资金
- Department of Science and Technology (DST)
- CSIR
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T-0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS2 field-effect devices, which leads to carrier localization, as well.
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