期刊
ACS NANO
卷 6, 期 1, 页码 126-132出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn202996r
关键词
CVD graphene; hydrogen etching; anisotropic; copper-catalyzed
类别
资金
- Focus Center Research Program (FCRP)
- Center on Functional Engineered Nano Architectonics (FENA)
- King Abdul Aziz City for Science and Technology (KACST)/California Center of Excellence on Nano Science and Engineering for Green and Clean Technologies
We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 degrees C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared to other temperatures (700, 900, and 1000 degrees C, etching of graphene at 800 degrees C Is most efficient and anisotroplc. Of the angles of graphene edges after etching, 80% are 120 degrees, indicating the etching is highly anisotropic. No Increase of the D band along the etched edges indicates that the crystallographic orientation of etching is in the zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO2 under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size and may enable the etching of graphene Into nanoribbons for electronic applications.
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