4.8 Article

Grain Boundary Mapping in Polycrystalline Graphene

期刊

ACS NANO
卷 5, 期 3, 页码 2142-2146

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn1033423

关键词

graphene; polycrystalline; grain; grain boundary; transmission electron microscopy (TEM)

资金

  1. Office of Energy Research, Materials Sciences and Engineering Division, of the U. S. Department of Energy [DE-AC02-05CH-11231]
  2. National Science Foundation within the Center of Integrated Nanomechanical Systems [EEC-0832819]
  3. National Science Foundation [0906539]
  4. U.S. Department of Energy [DE-AC02-05CH11231]
  5. Samsung Scholarship
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [0906539] Funding Source: National Science Foundation

向作者/读者索取更多资源

We report direct mapping of the grains and grain boundaries (GBs) of large-area monolayer polycrystalline graphene sheets, at large (several micrometer) and single-atom length scales. Global grain and GB mapping is performed using electron diffraction in scanning transmission electron microscopy (STEM) or using dark-field imaging in conventional TEM. Additionally, we employ aberration-corrected TEM to extract direct images of the local atomic arrangements of graphene GBs, which reveal the alternating pentagon-heptagon structure along high-angle GBs. Our findings provide a readily adaptable tool for graphene GB studies.

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