期刊
ACS NANO
卷 5, 期 7, 页码 6032-6038出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn2018528
关键词
ferroelectrics; resistive switching; nanoscale capacitor; conductive-AFM; PFM; Pb(Zr0.2Ti0.8)O-3
类别
资金
- German Science Foundation (DFG) [SFB762]
Spontaneous polarization of ferroelectric materials has been for a long time proposed as binary information support, but it suffers so far from destructive readout. A nondestructive resistive readout of the ferroelectric polarization state in a metal-ferroelectric-metal capacitor would thus be advantageous for data storage applications. Combing conducting force microscopy and piezoelectric force microscopy, we unambiguously show thatferroelectric polarization direction and resistance state are correlated for epitaxial ferroelectric Pb(Zr0.2Ti0.8)O-3 nanoscale capacitors prepared by self-assembly methods. For intermediate ferroelectric layer thickness (similar to 9 nm) sandwiched between copper and La0.7Sr0.3MnO3 electrodes we achieved giant electroresistance with a resistance ratio of >1500 and high switching current densities (>10 A/cm(2)) necessary for effective resistive readout. The present approach uses metal-ferroelectric-metal devices at room temperature and, therefore, significantly advances the use of ferroelectric-based resistive switching.
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