期刊
ACS NANO
卷 5, 期 5, 页码 3970-3976出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn200521r
关键词
InGaN nanowires; light-emitting diode; epitaxy; halide chemical vapor deposition; tunable emission
类别
资金
- Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy [DE-AC02-05CH11231]
Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of InxGa1-xN nanowire arrays (0.06 <= x <= 0.43) on c-plane sapphire (Al2O3(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the < 002 > direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from InxGa1-xN nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据