期刊
ACS NANO
卷 5, 期 7, 页码 5969-5975出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn201757j
关键词
laser patterning; laser-modified epitaxial graphene; Schottky junction; photoconductive detector; scanning tunneling microscopy; Raman spectroscopy
类别
资金
- Faculty of Science, National University of Singapore
- NRF [R-I43-000-360-281]
Large-area patterning of epitaxial graphene for Schottky junction photodetectors has been demonstrated with a simple laser irradiation method. In this method, semimetal-semiconductor Schottky junctions are created in a controllable pattern between epitaxial graphene (EG) and laser-modified epitaxial graphene (LEG). The zero-biased EG-LEG-EG photo-detector exhibits a nanosecond and wavelength-independent photoresponse in a broad-band spectrum from ultraviolet (200 nm) through visible to infrared light (1064 nm), distinctively different from conventional photon detectors. An efficient external photoresponsivity (or efficiency) of similar to 0.1 A.W-1 is achieved with a biased interdigitated EG-LEG-EG photodetector. The fabrication method presented here opens a viable route to carbon optoelectronics for a fast and highly efficient photoconductive detector.
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