4.8 Article

Field Emission from Atomically Thin Edges of Reduced Graphene Oxide

期刊

ACS NANO
卷 5, 期 6, 页码 4945-4952

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn201043a

关键词

atomically thin edge; field electron emission; reduced graphene oxide; chemically derived graphene; low threshold field; field emission pattern; interference

资金

  1. National Science Foundation [ECS 0543867]
  2. Ministry of Education, Culture, Sports, Science and Technology of Japan [19206008, 20410108]
  3. Center for Advanced Structural Ceramics (CASC) at Imperial College London
  4. Royal Society
  5. NSF [CHE-0911197]
  6. Grants-in-Aid for Scientific Research [19206008] Funding Source: KAKEN

向作者/读者索取更多资源

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1 V/mu m) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy measurement; show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams are coherent. On the basis of our high-resolution transmission electron microscopy, infrared spectroscopy, and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.

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