期刊
ACS NANO
卷 5, 期 5, 页码 3977-3986出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn2005443
关键词
radiation damage; boron nitride; edge structure; energetics; transmission electron microscopy
类别
资金
- EPSRC [EP/F028784/1]
We show that hexagonal boron nitride membranes synthesized by chemical exfoliation are more resistant to electron beam irradiation at 80 kV than is graphene, consistent with quantum chemical calculations describing the radiation damage processes. Monolayer hexagonal boron nitride does not form vacancy defects or amorphize during extended electron beam irradiation. Zigzag edge structures are predominant in thin membranes for both a freestanding boron nitride monolayer and for a supported multilayer step edge. We have also determined that the elemental termination species in the zigzag edges is predominantly N.
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