期刊
ACS NANO
卷 5, 期 12, 页码 9628-9638出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn202992v
关键词
printed electronics; inorganic oxide FET; nanoparticle channel transistor; electrochemical gating; high mobility; room temperature processing
类别
资金
- Deutsche Forschungsgemeinschaft (DFG) [HA1344/25-1]
- Center for Functional Nanostructures (CFN) [D4.4]
- State of Hesse
Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with Intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their Incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed Inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm(2)/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials.
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