期刊
ACS NANO
卷 5, 期 2, 页码 1147-1153出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn1027856
关键词
aligned carbon nanotubes; field-effect transistors; low work function metal contact; n-type transistors; CMOS integrated circuits
类别
资金
- SRC FCRP FENA Center
- Joint KACST/California Center of Excellence
- National Science Foundation [CCF-0726815, CCF-0702204]
Complementary metal-oxide semiconductor (CMOS) operation is very desirable for logic circuit applications as it offers rail-to-rail swing, larger noise margin, and small static power consumption. However, it remains to be a challenging task for nanotube-based devices. Here in this paper, we report our progress on metal contact engineering for n-type nanotube transistors and CMOS Integrated circuits using aligned carbon nanotubes. By using Pd as source/drain contacts for p-type transistors, small work function metal Gd as source/drain contacts for n-type transistors, and evaporated SiO2 as a passivation layer, we have achieved n-type transistor, PN diode, and integrated CMOS inverter with an air-stable operation. Compared with other nanotube n-doping techniques, such as potassium doping, PEI doping, hydrazine doping, etc., using low work function metal contacts for n-type nanotube devices is not only air stable but also integrated circuit fabrication compatible. Moreover, our aligned nanotube platform for CMOS integrated circuits shows significant advantage over the previously reported individual nanotube platforms with respect to scalability and reproducibility and suggests a practical and realistic approach for nanotube-based CMOS integrated circuit applications.
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