期刊
ACS NANO
卷 4, 期 9, 页码 5405-5413出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn101019h
关键词
graphene; graphene nanoribbons; carbon nanotubes; field-effect transistors; nonvolatile memories
类别
资金
- Air Force Research Laboratory through University Technology Corporation [09-S568-064-01-C1]
- Air Force Office of Scientific Research [FA9550-09-1-0581]
- Army Research Office through an SBIR with Privatran LLC
- Office of Naval Research MURI
We demonstrate that graphene nanoribbons (GNRs), produced by the chemical unzipping of carbon nanotubes, can be conveniently used from solution to hand-paint unidirectional arrays of GNRs atop silicon oxide. Through this simple alignment technique, numerous GNR-based devices, including field effect transistors, sensors, and memories can be easily fabricated on a single chip, and then used to generate statistically relevant device assessments. Such studies immediately give insights into, for example, multilayering properties on conductance, the profound effects that atmospheric adsorbates have upon the transfer characteristics of graphene, and other phenomena affecting the performance of GNR devices.
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