4.8 Article

Controlling Band Gap Energies in Cluster-Assembled Ionic Solids through Internal Electric Fields

期刊

ACS NANO
卷 4, 期 10, 页码 5813-5818

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn101640r

关键词

cluster-assembled materials; arsenic clusters; band gap tuning

资金

  1. U.S. Army Research Office (MURI) [W911NF-06-1-0280]
  2. Kavli Foundation

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Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As-7-Au-2-As-7](4-) in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

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