期刊
ACS NANO
卷 4, 期 3, 页码 1596-1602出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn9012466
关键词
indium selenide; nanowire arrays; photodetector; semiconductor; visible light; thermal evaporation; sensor
类别
资金
- Japan Society for the Promotion of Science (JSPS)
- World Premier International Research Center
- MEXT, Japan
- National Natural Science Foundation of China [20733006, 50720145202]
- National Basic Research Program of China [2006CB806200, 2007CB936402]
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
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