期刊
ACS NANO
卷 4, 期 7, 页码 3743-3752出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn100129j
关键词
lead sulfide; quantum dot; fullerene; photovoltaic; solar cell; air annealing; recombination
类别
资金
- Department of Energy
- National Science Foundation
- Link Foundation
- Fondazione Fratelli Rocca
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [819762] Funding Source: National Science Foundation
We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FE) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (V-OC) of 0.47 V can be achieved. The power conversion efficiency reaches 1.3% under 1 sun AM1.5 test conditions and 2.4% under monochromatic infrared (lambda = 1310 nm) illumination. A consistent mechanism for device operation is developed through a circuit model and experimental measurements, shedding light on new approaches for optimization of solar cell performance by modifying the interface between the QDs and the neighboring charge transport layers.
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