期刊
ACS NANO
卷 4, 期 12, 页码 7087-7092出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn101296x
关键词
trilayer graphene; electronic transport; coulomb scattering; magneto resistance; energy gap
类别
资金
- ASTAR SERC [082 101 0015]
- NRF-CRP
The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature. The dependence of resistance on the magnetic field can be explained by the splitting of Landau levels (Lis). Our results reveal that the energy gap in the trilayer graphene is thermally activated and increases with root B.
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