期刊
ACS NANO
卷 4, 期 6, 页码 2994-2998出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn1006094
关键词
carbon nanotube; transparent; thin-film transistor; network nanotube; driving circuit; pixel; OLED
类别
资金
- U.S. National Science Foundation [CMMI 826276]
- Ministry of Education, Science and Technology [2009-0082683, 2009-0082818]
- National Research Foundation of Korea [2009-0082683, 2010-50192, 2009-0082818] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I-on) in the microampere range, high on/off current ratio (I-on/I-off), high field-effect mobility, and uniform threshold voltage (V-th). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I-on/I-off higher than 10(3), and a high yield with reproducible electrical characteristics.
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