4.8 Article

Electrical Transport and Field-Effect Transistors Using Inkjet-Printed SWCNT Films Having Different Functional Side Groups

期刊

ACS NANO
卷 4, 期 6, 页码 3318-3324

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn1000723

关键词

carbon nanotubes; inkjet printing; percolation threshold; nanotube network; Schottky barrier

资金

  1. TEKES [52467, 52468]
  2. Academy of Finland [120853, 128626, 128908]
  3. NGS-Nano
  4. NSF Materials World Network [DMR-0710555]
  5. CONACYT-Mexico
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [0801012] Funding Source: National Science Foundation
  8. Academy of Finland (AKA) [128908, 128626, 128908] Funding Source: Academy of Finland (AKA)

向作者/读者索取更多资源

The electrical properties of random networks of single-wall carbon nanotubes (SWNTs) obtained by inkjet printing are studied. Water-based stable inks of functionalized SWNTs (carboxylic acid, amide, poly(ethylene glycol), and polyaminobenzene sulfonic acid) were prepared and applied to inkjet deposit microscopic patterns of nanotube films on lithographically defined silicon chips with a back-side gate arrangement. Source-drain transfer characteristics and gate-effect measurements confirm the important role of the chemical functional groups in the electrical behavior of carbon nanotube networks. Considerable nonlinear transport in conjunction with a high channel current on/off ratio of similar to 70 was observed with poly(ethylene glycol)-functionalized nanotubes. The positive temperature coefficient of channel resistance shows the nonmetallic behavior of the inkjet-printed films. Other inkjet-printed field-effect transistors using carboxyl-functionalized nanotubes as source, drain, and gate electrodes, poly(ethylene glycol)-functionalized nanotubes as the channel, and poly(ethylene glycol) as the gate dielectric were also tested and characterized.

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