期刊
ACS NANO
卷 4, 期 7, 页码 4206-4210出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn100971s
关键词
graphene; chemical vapor deposition; transmission electron microscopy; synthesis; catalysis
类别
资金
- EU
- Free State of Saxony
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.
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