期刊
ACS NANO
卷 4, 期 4, 页码 1805-1812出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn900969y
关键词
nanotubes; nanowires; nanoparticles; chemical vapor deposition
类别
资金
- Max Planck Society
Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10-20 nm), enabling Si 1D growth at temperatures as low as 320 degrees C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 degrees C. On SiOx/Si, only Si lanotubes (SiNTs) are obtained right up to 420 degrees C. A mixture of SiNTs and SiNWs is observed at 450 degrees C and only SiNWs grow at 480 degrees C.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据